document: Integrated process control using an in situ sensor for etch The migration to tighter geometries and more complex process sequence integration schemes requires having the ability to compensate for upstream deviations from target specifications . Doing so ensures that-downstream process sequences operate on work-in-progress that is well within control . Because point-of-use visibility of work-in-progress quality has become of paramount concern in the industry 's drive to reduce scrap and improve yield , controlling trench depth has assumed greater importance . An integrated , interferometric based , rate monitor for etch-to-depth and spacer etch applications has been developed for controlling this parameter . This article demonstrates that the integrated rate monitor , using polarization and digital signal processing , enhances control etch-to-depth processes and can also be implemented as a predictive endpoint in a wafer manufacturing environment for dual damascene trench etch and spacer etch applications
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